1/10 september 2003 STGD3NB60HD n-channel 6a - 600v - dpak powermesh? igbt n high input impedance n off losses include tail current n low gate charge n high frequency operation n typical short circuit withstand time 5micro s-family, 4 micro h family n co-packaged with turboswitch? antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has de- signed an advanced family of igbts, the power- mesh? igbts, with outstanding perfomances. the suffix "h" identifies a family optimized for high frequency applications (up to 50khz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. applications n high frequency motor controls n smps and pfc in both hard switch and resonant topologies ordering information type v ces v ce(sat) (max) @25c i c @100c STGD3NB60HD 600 v < 2.8 v6a sales type marking package packaging STGD3NB60HDt4 gd3nb60hd dpak tape & reel dpak 1 3 internal schematic diagram
STGD3NB60HD 2/10 absolute maximum ratings ( ) pulsewidthlimitedbysafeoperatingarea thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1) symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c =25c 10 a i c collector current (continuous) at t c =100c 6a i cm ( ) collector current (pulsed) 24 a p tot total dissipation at t c = 25c 50 w derating factor 0.4 w/c t stg storage temperature C55 to 150 c t j operating junction temperature rthj-case thermal resistance junction-case max 2.5 c/w rthj-amb thermal resistance junction-ambient max 100 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 50 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250a 35v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =3a 2.4 2.8 v v ge =15v,i c = 3 a, tj =125c 1.9 v
3/10 STGD3NB60HD electrical characteristics (continued) dynamic switching on switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) collector-emitter diode symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =3 a 2.4 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce =25v,f=1mhz,v ge = 0 235 33 6.6 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c =3a, v ge =15v 21 6 7.6 27 nc nc nc i cl latching current v clamp = 480 v , tj = 125c r g =10 w 12 a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc =480v,i c =3a r g =10 w ,v ge =15v 5 11 ns ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c =3ar g =10 w v ge = 15 v,tj = 125c 400 77 a/s j symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c =3 a, r ge =10 w ,v ge =15v 76 ns t r (v off ) off voltage rise time 36 ns t d ( off ) delay time 53 ns t f fall time 77 ns e off (**) turn-off switching loss 33 m j e ts total switching loss 100 m j t c cross-over time v cc = 480 v, i c =3a, r ge =10 w ,v ge =15v tj = 125 c 180 ns t r (v off ) off voltage rise time 82 ns t d ( off ) delay time 58 ns t f fall time 110 ns e off (**) turn-off switching loss 88 m j e ts total switching loss 165 m j symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 1.5 12 a a v f forward on-voltage i f = 1.5 a i f = 1.5 a, tj = 125 c 1.6 1.3 2.1 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 1.5 a ,v r = 400 v, tj =125c, di/dt = 100 a/ m s 95 110 2.7 ns nc a
STGD3NB60HD 4/10 thermal impedance transfer characteristics output characteristics collector-emitter on voltage vs temperature transconductance
5/10 STGD3NB60HD total switching losses vs gate resistance gate charge vs gate-emitter voltage capacitance variations normalized breakdown voltage vs temperature collector-emitter on voltage vs collettor current gate threshold vs temperature
STGD3NB60HD 6/10 emitter-collector diode characteristics total switching losses vs temperature switching off safe operating area total switching losses vs collector current
7/10 STGD3NB60HD fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
STGD3NB60HD 8/10 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
9/10 STGD3NB60HD tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
STGD3NB60HD 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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